Product Summary
JFET Transistor Transistor Type: JFET Breakdown Voltage Vbr: -40V Zero Gate Voltage Drain Current Idss: 20mA to 100mA Gate-Source Cutoff Voltage Vgs(off) Max: -10V Power Dissipation Pd: 300mW No. of Pins: 3 Package / Case: 3-TO-18
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![]() 2N4857A-E3 |
![]() Vishay/Siliconix |
![]() JFET 40V 5pA |
![]() Data Sheet |
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![]() 2N4857A |
![]() Central Semiconductor |
![]() JFET Leaded JFET |
![]() Data Sheet |
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(China (Mainland))










