Product Summary
TRANSISTOR Transistor Type: JFET Breakdown Voltage Vbr: 30V Gate-Source Cutoff Voltage Vgs(off) Max: 4V Power Dissipation Pd: 500mW Operating Temperature Range: -55°C to +200°C No. of Pins: 3 Continuous Drain Current Id: -25mA RoHS Compliant: No
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2N5116 |
Central Semiconductor |
JFET P-Ch Junc FET |
Data Sheet |
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2N5116-E3 |
Vishay/Siliconix |
JFET 30V 10pA |
Data Sheet |
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